FMP20N60S1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FMP20N60S1
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 3120 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO-220
Аналог (замена) для FMP20N60S1
FMP20N60S1 Datasheet (PDF)
fmp20n60s1.pdf

http://www.fujielectric.com/products/semiconductor/FMP20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 4.50.2TO-220 10+0.5 01.30.2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPS1.2 0.2ServerPRE-S
fmp20n60s1.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMP20N60S1FEATURESWith TO-220 packagingLow switching lossLow on-state resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RA
fmp20n50es.pdf

FMP20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
fmp20n50e.pdf

FMP20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Другие MOSFET... FMP13N60E , FMP13N60ES , FMP16N50E , FMP16N50ES , FMP16N60E , FMP16N60ES , FMP20N50E , FMP20N50ES , IRF540 , FMP30N60S1 , FMP76-010T , FMR09N90E , FMR11N90E , FMR17N60ES , FMR19N60E , FMR19N60ES , FMR21N50ES .
History: CEM6601 | LSD65R180GT | 2SK2631 | 2SK3455 | PHP79NQ08LT | LSGH04R028 | AP4P016I
History: CEM6601 | LSD65R180GT | 2SK2631 | 2SK3455 | PHP79NQ08LT | LSGH04R028 | AP4P016I



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
ru7088r | 2sa733 replacement | 2n3906 transistor equivalent | 2sc4883 | tip31a datasheet | d882 datasheet | tip29 transistor | s9014 transistor datasheet