FMV20N60S1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMV20N60S1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 53 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 3120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-220F

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FMV20N60S1 datasheet

 ..1. Size:448K  fuji
 fmv20n60s1.pdf pdf_icon

FMV20N60S1

http //www.fujielectric.com/products/semiconductor/ FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-220F(SLS) Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) Power condi

 ..2. Size:239K  inchange semiconductor
 fmv20n60s1.pdf pdf_icon

FMV20N60S1

isc N-Channel MOSFET Transistor FMV20N60S1 FEATURES Low on-resistance RDS(on) 0.19 (max) Low switching loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION UPS (Uninterruptible Power Supply) Power conditioner system Power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

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 fmv20n50e.pdf pdf_icon

FMV20N60S1

FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

 8.2. Size:491K  fuji
 fmv20n50es.pdf pdf_icon

FMV20N60S1

FMV20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

MOSTRAR MÁS

Otros transistores... FMV16N50ES, FMV16N60E, FMV16N60ES, FMV17N60ES, FMV19N60E, FMV19N60ES, FMV20N50E, FMV20N50ES, 5N65, FMV21N50ES, FMV23N50ES, FMV24N25G, FMV30N60S1, FMW20N60S1HF, FMW30N60S1HF, FMW47N60S1HF, FMW79N60S1HF