FMV20N60S1. Аналоги и основные параметры

Наименование производителя: FMV20N60S1

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 53 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 3120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FMV20N60S1

- подборⓘ MOSFET транзистора по параметрам

 

FMV20N60S1 даташит

 ..1. Size:448K  fuji
fmv20n60s1.pdfpdf_icon

FMV20N60S1

http //www.fujielectric.com/products/semiconductor/ FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-220F(SLS) Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) Power condi

 ..2. Size:239K  inchange semiconductor
fmv20n60s1.pdfpdf_icon

FMV20N60S1

isc N-Channel MOSFET Transistor FMV20N60S1 FEATURES Low on-resistance RDS(on) 0.19 (max) Low switching loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION UPS (Uninterruptible Power Supply) Power conditioner system Power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.1. Size:360K  fuji
fmv20n50e.pdfpdf_icon

FMV20N60S1

FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

 8.2. Size:491K  fuji
fmv20n50es.pdfpdf_icon

FMV20N60S1

FMV20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

Другие IGBT... FMV16N50ES, FMV16N60E, FMV16N60ES, FMV17N60ES, FMV19N60E, FMV19N60ES, FMV20N50E, FMV20N50ES, 5N65, FMV21N50ES, FMV23N50ES, FMV24N25G, FMV30N60S1, FMW20N60S1HF, FMW30N60S1HF, FMW47N60S1HF, FMW79N60S1HF