All MOSFET. FMV20N60S1 Datasheet

 

FMV20N60S1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMV20N60S1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 3120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220F

 FMV20N60S1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMV20N60S1 Datasheet (PDF)

 ..1. Size:448K  fuji
 fmv20n60s1.pdf

FMV20N60S1 FMV20N60S1

http://www.fujielectric.com/products/semiconductor/FMV20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-220F(SLS)Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)TelecomSource(S)Power condi

 ..2. Size:239K  inchange semiconductor
 fmv20n60s1.pdf

FMV20N60S1 FMV20N60S1

isc N-Channel MOSFET Transistor FMV20N60S1FEATURESLow on-resistance:RDS(on) 0.19 (max)Low switching loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUPS (Uninterruptible Power Supply)Power conditioner systemPower supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

 8.1. Size:360K  fuji
 fmv20n50e.pdf

FMV20N60S1 FMV20N60S1

FMV20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 8.2. Size:491K  fuji
 fmv20n50es.pdf

FMV20N60S1 FMV20N60S1

FMV20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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