FMV20N60S1
MOSFET. Datasheet pdf. Equivalent
Type Designator: FMV20N60S1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 53
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 3120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
TO-220F
FMV20N60S1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMV20N60S1
Datasheet (PDF)
..1. Size:448K fuji
fmv20n60s1.pdf
http://www.fujielectric.com/products/semiconductor/FMV20N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-220F(SLS)Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)TelecomSource(S)Power condi
..2. Size:239K inchange semiconductor
fmv20n60s1.pdf
isc N-Channel MOSFET Transistor FMV20N60S1FEATURESLow on-resistance:RDS(on) 0.19 (max)Low switching loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUPS (Uninterruptible Power Supply)Power conditioner systemPower supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
8.1. Size:360K fuji
fmv20n50e.pdf
FMV20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.
8.2. Size:491K fuji
fmv20n50es.pdf
FMV20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2
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