FQA10N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQA10N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 192 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 69 nS
   Cossⓘ - Capacitancia de salida: 166 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm
   Paquete / Cubierta: TO-3PN

Búsqueda de reemplazo de MOSFET FQA10N60C

FQA10N60C Datasheet (PDF)

..1. Size:652K fairchild semi
fqa10n60c.pdf

TMQFETFQA10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to Fas

8.1. Size:800K fairchild semi
fqa10n80c.pdf

September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

8.2. Size:806K fairchild semi
fqa10n80c f109.pdf

August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

8.3. Size:675K fairchild semi
fqa10n80.pdf

September 2000TMQFETFQA10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tail

8.4. Size:1463K onsemi
fqa10n80c-f109.pdf

FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: