FQA10N60C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA10N60C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 192 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 166 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm

Encapsulados: TO-3PN

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FQA10N60C datasheet

 ..1. Size:652K  fairchild semi
 fqa10n60c.pdf pdf_icon

FQA10N60C

TM QFET FQA10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to Fas

 8.1. Size:800K  fairchild semi
 fqa10n80c.pdf pdf_icon

FQA10N60C

September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

 8.2. Size:806K  fairchild semi
 fqa10n80c f109.pdf pdf_icon

FQA10N60C

August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

 8.3. Size:675K  fairchild semi
 fqa10n80.pdf pdf_icon

FQA10N60C

September 2000 TM QFET FQA10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tail

MOSTRAR MÁS

Otros transistores... FP10W90HVX2, FP11W60C3, FP20W50VX2, FP20W60C3, FP3W90, FP5W90HVX2, FP7W90HVX2, FP8V50, SI2302, FQA10N80, FQA10N80C, FQA11N90, FQA11N90C, FQA12N60, FQA12P20, FQA13N50, FQA13N50C