FQA10N60C Specs and Replacement

Type Designator: FQA10N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO-3PN

FQA10N60C substitution

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FQA10N60C datasheet

 ..1. Size:652K  fairchild semi
 fqa10n60c.pdf pdf_icon

FQA10N60C

TM QFET FQA10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to Fas... See More ⇒

 8.1. Size:800K  fairchild semi
 fqa10n80c.pdf pdf_icon

FQA10N60C

September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to ... See More ⇒

 8.2. Size:806K  fairchild semi
 fqa10n80c f109.pdf pdf_icon

FQA10N60C

August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to... See More ⇒

 8.3. Size:675K  fairchild semi
 fqa10n80.pdf pdf_icon

FQA10N60C

September 2000 TM QFET FQA10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tail... See More ⇒

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Detailed specifications: FP10W90HVX2, FP11W60C3, FP20W50VX2, FP20W60C3, FP3W90, FP5W90HVX2, FP7W90HVX2, FP8V50, SI2302, FQA10N80, FQA10N80C, FQA11N90, FQA11N90C, FQA12N60, FQA12P20, FQA13N50, FQA13N50C

Keywords - FQA10N60C MOSFET specs

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