All MOSFET. FQA10N60C Datasheet

 

FQA10N60C Datasheet and Replacement


   Type Designator: FQA10N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-3PN
 

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FQA10N60C Datasheet (PDF)

 ..1. Size:652K  fairchild semi
 fqa10n60c.pdf pdf_icon

FQA10N60C

TMQFETFQA10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to Fas

 8.1. Size:800K  fairchild semi
 fqa10n80c.pdf pdf_icon

FQA10N60C

September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 8.2. Size:806K  fairchild semi
 fqa10n80c f109.pdf pdf_icon

FQA10N60C

August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 8.3. Size:675K  fairchild semi
 fqa10n80.pdf pdf_icon

FQA10N60C

September 2000TMQFETFQA10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tail

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Datasheet: FP10W90HVX2 , FP11W60C3 , FP20W50VX2 , FP20W60C3 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , SI2302 , FQA10N80 , FQA10N80C , FQA11N90 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C .

History: NCEP01T13B | SFF23N60Z | FP8V50

Keywords - FQA10N60C MOSFET datasheet

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