FQA10N60C
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQA10N60C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 192
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 44
nC
trⓘ -
Время нарастания: 69
ns
Cossⓘ - Выходная емкость: 166
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.73
Ohm
Тип корпуса:
TO-3PN
Аналог (замена) для FQA10N60C
FQA10N60C
Datasheet (PDF)
..1. Size:652K fairchild semi
fqa10n60c.pdf 
TMQFETFQA10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to Fas
8.1. Size:800K fairchild semi
fqa10n80c.pdf 
September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
8.2. Size:806K fairchild semi
fqa10n80c f109.pdf 
August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
8.3. Size:675K fairchild semi
fqa10n80.pdf 
September 2000TMQFETFQA10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tail
8.4. Size:1463K onsemi
fqa10n80c-f109.pdf 
FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall
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