FQA11N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA11N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 72 nC

Tiempo de elevación (tr): 135 nS

Conductancia de drenaje-sustrato (Cd): 260 pF

Resistencia drenaje-fuente RDS(on): 0.96 Ohm

Empaquetado / Estuche: TO-3P

Búsqueda de reemplazo de MOSFET FQA11N90

FQA11N90 Datasheet (PDF)

1.1. fqa11n90.pdf Size:827K _upd-mosfet

September 2007 ® QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • 11.4A, 900V, RDS(on) = 0.96Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 72 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 30pF) This advanced technology has been especi

1.2. fqa11n90c.pdf Size:706K _upd-mosfet

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching

1.3. fqa11n90c f109.pdf Size:823K _fairchild_semi

September 2007 � QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description � 11A, 900V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect � Low gate charge ( typical 60 nC) transistors are produced using Fairchild�s proprietary, planar stripe, DMOS technology. � Low Crss ( typical 23pF) This advanced technology has been especially tailored to � Fast sw

1.4. fqa11n90 fqa11n90 f109.pdf Size:829K _fairchild_semi

September 2007 � QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description � 11.4A, 900V, RDS(on) = 0.96? @VGS = 10 V These N-Channel enhancement mode power field effect � Low gate charge ( typical 72 nC) transistors are produced using Fairchild�s proprietary, planar stripe, DMOS technology. � Low Crss ( typical 30pF) This advanced technology has been especially tailored

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

Liste

Recientemente añadidas las descripciónes de los transistores: