FQA11N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA11N90
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 135 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.96 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de FQA11N90 MOSFET
FQA11N90 Datasheet (PDF)
fqa11n90 fqa11n90 f109.pdf

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi
fqa11n90.pdf

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi
fqa11n90.pdf

isc N-Channel MOSFET Transistor FQA11N90FEATURESDrain Current : I = 11.4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.96(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
fqa11n90c.pdf

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching
Otros transistores... FP20W60C3 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , 2N60 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C .
History: PHD78NQ03L | SFS08R08DF | HM2309C | IRF6727M | 2SK3618 | WMM36N60C4 | MT06N020AL
History: PHD78NQ03L | SFS08R08DF | HM2309C | IRF6727M | 2SK3618 | WMM36N60C4 | MT06N020AL



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