FQA11N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA11N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 72 nC
Rise Time (tr): 135 nS
Drain-Source Capacitance (Cd): 260 pF
Maximum Drain-Source On-State Resistance (Rds): 0.96 Ohm
Package: TO-3P
FQA11N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA11N90 Datasheet (PDF)
1.1. fqa11n90.pdf 
Size:827K _upd-mosfet
September 2007 ® QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • 11.4A, 900V, RDS(on) = 0.96Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 72 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 30pF) This advanced technology has been especi
1.2. fqa11n90c.pdf Size:706K _upd-mosfet
FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching
1.3. fqa11n90c f109.pdf Size:823K _fairchild_semi
September 2007 ® QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • 11A, 900V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 60 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 23pF) This advanced technology has been especially tailored to • Fast sw
1.4. fqa11n90 fqa11n90 f109.pdf Size:829K _fairchild_semi
September 2007 ® QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • 11.4A, 900V, RDS(on) = 0.96? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 72 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 30pF) This advanced technology has been especially tailored
Datasheet: FP20W60C3 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , IRF9640 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C .
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