All MOSFET. FQA11N90 Datasheet

 

FQA11N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA11N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 11.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.96 Ohm
   Package: TO-3P

 FQA11N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA11N90 Datasheet (PDF)

 ..1. Size:829K  fairchild semi
 fqa11n90 fqa11n90 f109.pdf

FQA11N90 FQA11N90

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi

 ..2. Size:827K  fairchild semi
 fqa11n90.pdf

FQA11N90 FQA11N90

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi

 ..3. Size:286K  inchange semiconductor
 fqa11n90.pdf

FQA11N90 FQA11N90

isc N-Channel MOSFET Transistor FQA11N90FEATURESDrain Current : I = 11.4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.96(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 0.1. Size:706K  fairchild semi
 fqa11n90c.pdf

FQA11N90 FQA11N90

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

 0.2. Size:823K  fairchild semi
 fqa11n90c f109.pdf

FQA11N90 FQA11N90

September 2007 QFETFQA11N90C_F109900V N-Channel MOSFETFeatures Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 23pF)This advanced technology has been especially tailored

 0.3. Size:708K  onsemi
 fqa11n90c.pdf

FQA11N90 FQA11N90

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching

 0.4. Size:1506K  onsemi
 fqa11n90-f109.pdf

FQA11N90 FQA11N90

FQA11N90-F109N-Channel QFET MOSFET 900 V, 11.4 A, 960 mDescriptionThis N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V,and DMOS technology. This advanced MOSFET technology ID = 5.7 Ahas been especially tailored to reduce on-state resistance, Low

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFH16N80P

 

 
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