FQA11N90 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQA11N90
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 135 ns
Cossⓘ - Выходная емкость: 260 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.96 Ohm
Тип корпуса: TO-3P
Аналог (замена) для FQA11N90
FQA11N90 Datasheet (PDF)
fqa11n90 fqa11n90 f109.pdf

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi
fqa11n90.pdf

September 2007 QFETFQA11N90 / FQA11N90_F109900V N-Channel MOSFETFeatures Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 30pF)This advanced technology has been especi
fqa11n90.pdf

isc N-Channel MOSFET Transistor FQA11N90FEATURESDrain Current : I = 11.4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.96(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
fqa11n90c.pdf

FQA11N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast switching
Другие MOSFET... FP20W60C3 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , 2N60 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C .
History: IRF3709L | ZVN0540ASTOA | AP6910GSM-HF | IPB60R360CFD7 | DMJ70H1D5SV3 | STT4P3LLH6 | NCV8402A
History: IRF3709L | ZVN0540ASTOA | AP6910GSM-HF | IPB60R360CFD7 | DMJ70H1D5SV3 | STT4P3LLH6 | NCV8402A



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