FQA11N90 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQA11N90
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток (Uds): 900 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Пороговое напряжение включения Ugs(th): 5 V
Максимально допустимый постоянный ток стока (Id): 11.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 135 ns
Выходная емкость (Cd): 260 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.96 Ohm
Тип корпуса: TO-3P
FQA11N90 Datasheet (PDF)
1.1. fqa11n90.pdf 
Size:827K _upd-mosfet
September 2007 ® QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • 11.4A, 900V, RDS(on) = 0.96Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 72 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 30pF) This advanced technology has been especi
1.2. fqa11n90c.pdf Size:706K _upd-mosfet
FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching
1.3. fqa11n90c f109.pdf Size:823K _fairchild_semi
September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored to Fast sw
1.4. fqa11n90 fqa11n90 f109.pdf Size:829K _fairchild_semi
September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored
Другие MOSFET... FP20W60C3 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , IRF9640 , FQA11N90C , FQA12N60 , FQA12P20 , FQA13N50 , FQA13N50C , FQA13N80 , FQA14N30 , FQA16N25C .
Список транзисторов
Обновления
MOSFET: SIHF22N60S | SIHF22N60E | SIHF18N50D | SIHF18N50C | SIHF16N50C | SIHF15N65E | SIHF15N60E | SIHF12N65E | SIHF12N60E | SIHF12N50C | SIHF10N40D | SIHD7N60E | SIHD6N65E | SIHD6N62E | SIHD5N50D |