FQA28N50F109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA28N50F109

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 290 nS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO-3PN

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FQA28N50F109 datasheet

 5.1. Size:670K  fairchild semi
 fqa28n50f.pdf pdf_icon

FQA28N50F109

September 2001 TM FRFET FQA28N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially

 5.2. Size:215K  inchange semiconductor
 fqa28n50f.pdf pdf_icon

FQA28N50F109

isc N-Channel MOSFET Transistor FQA28N50F FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 6.1. Size:472K  fairchild semi
 fqa28n50.pdf pdf_icon

FQA28N50F109

August 2014 FQA28N50 N-Channel QFET MOSFET 500 V, 28.4 A, 160 m Features Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect 14.2 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Gate Charge (Typ. 110 nC) This advanced technology has been especially tailored

 6.2. Size:778K  fairchild semi
 fqa28n50 f109.pdf pdf_icon

FQA28N50F109

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be

MOSTRAR MÁS

Otros transistores... FQA17N40, FQA17P10, FQA19N20L, FQA20N40, FQA22P10, FQA24N50F109, FQA24N50F, FQA28N15F109, IRF9640, FQA28N50F, FQA33N10, FQA33N10L, FQA34N20, FQA34N20L, FQA34N25, FQA35N40, FQA36P15F109