September 2001TMFRFETFQA28N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially

isc N-Channel MOSFET Transistor FQA28N50FFEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

August 2014FQA28N50N-Channel QFET MOSFET500 V, 28.4 A, 160 mFeatures Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect14.2 A transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Gate Charge (Typ. 110 nC)This advanced technology has been especially tailored

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be