FQA28N50F109 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQA28N50F109
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 310 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 290 ns
Cossⓘ - Выходная емкость: 640 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO-3PN
Аналог (замена) для FQA28N50F109
FQA28N50F109 Datasheet (PDF)
fqa28n50f.pdf

September 2001TMFRFETFQA28N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially
fqa28n50f.pdf

isc N-Channel MOSFET Transistor FQA28N50FFEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
fqa28n50.pdf

August 2014FQA28N50N-Channel QFET MOSFET500 V, 28.4 A, 160 mFeatures Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect14.2 A transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Gate Charge (Typ. 110 nC)This advanced technology has been especially tailored
fqa28n50 f109.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be
Другие MOSFET... FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , FQA22P10 , FQA24N50F109 , FQA24N50F , FQA28N15F109 , AON7403 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 .
History: PJQ5476AL | HYG023N03LR1V | BRA4N60 | NCE60P10K | STD30NF06T4 | CEB07N65 | 2SK4104
History: PJQ5476AL | HYG023N03LR1V | BRA4N60 | NCE60P10K | STD30NF06T4 | CEB07N65 | 2SK4104



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