All MOSFET. FQA28N50F109 Datasheet

 

FQA28N50F109 Datasheet and Replacement


   Type Designator: FQA28N50F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 28.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 290 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-3PN
 

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FQA28N50F109 Datasheet (PDF)

 5.1. Size:670K  fairchild semi
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FQA28N50F109

September 2001TMFRFETFQA28N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially

 5.2. Size:215K  inchange semiconductor
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FQA28N50F109

isc N-Channel MOSFET Transistor FQA28N50FFEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 6.1. Size:472K  fairchild semi
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FQA28N50F109

August 2014FQA28N50N-Channel QFET MOSFET500 V, 28.4 A, 160 mFeatures Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect14.2 A transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Gate Charge (Typ. 110 nC)This advanced technology has been especially tailored

 6.2. Size:778K  fairchild semi
 fqa28n50 f109.pdf pdf_icon

FQA28N50F109

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has be

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Datasheet: FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , FQA22P10 , FQA24N50F109 , FQA24N50F , FQA28N15F109 , IRLZ44N , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 .

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