FQA28N50F109 MOSFET PDF: N-Ch, 500V, 28.4A. Full specification with pinout and replacement list

FQA28N50F109 PDF Specs and Replacement

   Type Designator: FQA28N50F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 290 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-3PN

FQA28N50F109 substitution

- MOSFET ⓘ Cross-Reference Search

FQA28N50F109 PDF Specs

5.1. Size:670K fairchild semi
fqa28n50f.pdf pdf_icon

September 2001 TM FRFET FQA28N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially ... See More ⇒

5.2. Size:215K inchange semiconductor
fqa28n50f.pdf pdf_icon

isc N-Channel MOSFET Transistor FQA28N50F FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So... See More ⇒

6.1. Size:472K fairchild semi
fqa28n50.pdf pdf_icon

August 2014 FQA28N50 N-Channel QFET MOSFET 500 V, 28.4 A, 160 m Features Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect 14.2 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Gate Charge (Typ. 110 nC) This advanced technology has been especially tailored... See More ⇒

6.2. Size:778K fairchild semi
fqa28n50 f109.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be... See More ⇒