FQA8N90C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA8N90C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 240 W
Voltaje máximo drenador - fuente |Vds|: 900 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 35 nC
Tiempo de subida (tr): 110 nS
Conductancia de drenaje-sustrato (Cd): 130 pF
Resistencia entre drenaje y fuente RDS(on): 1.9 Ohm
Paquete / Cubierta: TO-3P
Búsqueda de reemplazo de MOSFET FQA8N90C
FQA8N90C Datasheet (PDF)
fqa8n90c f109.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
November 2007 QFETFQA8N90C_F109900V N-Channel MOSFETFeatures Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to
fqa8n90c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TMQFETFQA8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fast s
fqa8n90c-f109.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FQA8N90C-F109 N-Channel QFET MOSFETDescription900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 Vstripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3
fqa8n100c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
September 2005QFETFQA8N100C 1000V N-Channel MOSFETFeatures Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 53 nC)DMOS technology. Low Crss (typical 16 pF)This advanced technology has been especially tailored
fqa8n100c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA8N100CFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .