FQA8N90C MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA8N90C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA8N90C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm

Encapsulados: TO-3P

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FQA8N90C datasheet

..1. Size:807K fairchild semi
fqa8n90c f109.pdf pdf_icon

November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to

..2. Size:690K fairchild semi
fqa8n90c.pdf pdf_icon

TM QFET FQA8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast s

0.1. Size:1275K onsemi
fqa8n90c-f109.pdf pdf_icon

FQA8N90C-F109 N-Channel QFET MOSFET Description 900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 V stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

9.1. Size:460K fairchild semi
fqa8n100c.pdf pdf_icon

September 2005 QFET FQA8N100C 1000V N-Channel MOSFET Features Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 53 nC) DMOS technology. Low Crss (typical 16 pF) This advanced technology has been especially tailored

Otros transistores... FQA6N80, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, IRFB4110, FQA90N10V2, FQA9N50, FQA9N90C, FQAF10N80, FQAF11N40, FQAF11N90, FQAF12N60, FQAF12P20

FQA8N90C Todos los transistores