FQA8N90C Specs and Replacement

Type Designator: FQA8N90C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO-3P

FQA8N90C substitution

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FQA8N90C datasheet

 ..1. Size:807K  fairchild semi
 fqa8n90c f109.pdf pdf_icon

FQA8N90C

November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to... See More ⇒

 ..2. Size:690K  fairchild semi
 fqa8n90c.pdf pdf_icon

FQA8N90C

TM QFET FQA8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

 0.1. Size:1275K  onsemi
 fqa8n90c-f109.pdf pdf_icon

FQA8N90C

FQA8N90C-F109 N-Channel QFET MOSFET Description 900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 V stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3... See More ⇒

 9.1. Size:460K  fairchild semi
 fqa8n100c.pdf pdf_icon

FQA8N90C

September 2005 QFET FQA8N100C 1000V N-Channel MOSFET Features Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 53 nC) DMOS technology. Low Crss (typical 16 pF) This advanced technology has been especially tailored ... See More ⇒

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Detailed specifications: FQA6N80, FQA6N90, FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, IRFB4110, FQA90N10V2, FQA9N50, FQA9N90C, FQAF10N80, FQAF11N40, FQAF11N90, FQAF12N60, FQAF12P20

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