Справочник MOSFET. FQA8N90C

 

FQA8N90C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQA8N90C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 240 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
   Тип корпуса: TO-3P

 Аналог (замена) для FQA8N90C

 

 

FQA8N90C Datasheet (PDF)

 ..1. Size:807K  fairchild semi
 fqa8n90c f109.pdf

FQA8N90C FQA8N90C

November 2007 QFETFQA8N90C_F109900V N-Channel MOSFETFeatures Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to

 ..2. Size:690K  fairchild semi
 fqa8n90c.pdf

FQA8N90C FQA8N90C

TMQFETFQA8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fast s

 0.1. Size:1275K  onsemi
 fqa8n90c-f109.pdf

FQA8N90C FQA8N90C

FQA8N90C-F109 N-Channel QFET MOSFETDescription900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 Vstripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

 9.1. Size:460K  fairchild semi
 fqa8n100c.pdf

FQA8N90C FQA8N90C

September 2005QFETFQA8N100C 1000V N-Channel MOSFETFeatures Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 53 nC)DMOS technology. Low Crss (typical 16 pF)This advanced technology has been especially tailored

 9.2. Size:210K  inchange semiconductor
 fqa8n100c.pdf

FQA8N90C FQA8N90C

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA8N100CFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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