FQB10N60CTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB10N60CTM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 156 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 9.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 44 nC
Tiempo de subida (tr): 69 nS
Conductancia de drenaje-sustrato (Cd): 166 pF
Resistencia entre drenaje y fuente RDS(on): 0.73 Ohm
Paquete / Cubierta: D2-PAK
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FQB10N60CTM Datasheet (PDF)
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