FQB10N60CTM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB10N60CTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 44 nC
Rise Time (tr): 69 nS
Drain-Source Capacitance (Cd): 166 pF
Maximum Drain-Source On-State Resistance (Rds): 0.73 Ohm
Package: D2-PAK
FQB10N60CTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB10N60CTM Datasheet (PDF)
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