FQB10N60CTM Datasheet and Replacement. Cross Reference Search

FQB10N60CTM Datasheet (PDF)

..1. Size:614K fairchild semi
fqb10n60ctm fqi10n60ctu.pdf pdf_icon

TMQFETFQB10N60C / FQI10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

8.1. Size:606K fairchild semi
fqb10n20c.pdf pdf_icon

TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailore

8.2. Size:575K fairchild semi
fqb10n20ltm.pdf pdf_icon

December 2000TMQFETQFETQFETQFETFQB10N20L / FQI10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

8.3. Size:594K fairchild semi
fqb10n50cftm.pdf pdf_icon

October 2013FQB10N50CFN-Channel QFET FRFET MOSFET500 V, 10 A, 610 mFeatures Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC)and DMOS technology. This advanced MOSFET technology has been esp

Datasheet: FQAF7N80 , FQAF7N90 , FQAF8N80 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM , 20N50 , FQB11N40CTM , FQB11N40TM , FQB11P06TM , FQB12N50TMAM002 , FQB12N60CTM , FQB12N60TMAM002 , FQB12P10TM , FQB12P20TM .