FQB10N60CTM Specs and Replacement

Type Designator: FQB10N60CTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: D2-PAK

FQB10N60CTM substitution

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FQB10N60CTM datasheet

 ..1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf pdf_icon

FQB10N60CTM

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore... See More ⇒

 8.1. Size:606K  fairchild semi
 fqb10n20c.pdf pdf_icon

FQB10N60CTM

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore... See More ⇒

 8.2. Size:575K  fairchild semi
 fqb10n20ltm.pdf pdf_icon

FQB10N60CTM

December 2000 TM QFET QFET QFET QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced ... See More ⇒

 8.3. Size:594K  fairchild semi
 fqb10n50cftm.pdf pdf_icon

FQB10N60CTM

October 2013 FQB10N50CF N-Channel QFET FRFET MOSFET 500 V, 10 A, 610 m Features Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor s proprietary planar stripe Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp... See More ⇒

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Detailed specifications: FQAF7N80, FQAF7N90, FQAF8N80, FQAF90N08, FQAF9N50, FQAF9P25, FQB10N20C, FQB10N20LTM, STP80NF70, FQB11N40CTM, FQB11N40TM, FQB11P06TM, FQB12N50TMAM002, FQB12N60CTM, FQB12N60TMAM002, FQB12P10TM, FQB12P20TM

Keywords - FQB10N60CTM MOSFET specs

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