FQB10N60CTM. Аналоги и основные параметры

Наименование производителя: FQB10N60CTM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 156 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 69 ns

Cossⓘ - Выходная емкость: 166 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB10N60CTM

- подборⓘ MOSFET транзистора по параметрам

 

FQB10N60CTM даташит

 ..1. Size:614K  fairchild semi
 fqb10n60ctm fqi10n60ctu.pdf pdf_icon

FQB10N60CTM

TM QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore

 8.1. Size:606K  fairchild semi
 fqb10n20c.pdf pdf_icon

FQB10N60CTM

TM QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailore

 8.2. Size:575K  fairchild semi
 fqb10n20ltm.pdf pdf_icon

FQB10N60CTM

December 2000 TM QFET QFET QFET QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced

 8.3. Size:594K  fairchild semi
 fqb10n50cftm.pdf pdf_icon

FQB10N60CTM

October 2013 FQB10N50CF N-Channel QFET FRFET MOSFET 500 V, 10 A, 610 m Features Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor s proprietary planar stripe Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp

ПОКАЗАТЬ ЕЩЁ

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