FQB12N50TMAM002 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB12N50TMAM002

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 179 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.49 Ohm

Encapsulados: D2-PAK

 Búsqueda de reemplazo de FQB12N50TMAM002 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQB12N50TMAM002 datasheet

 4.1. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf pdf_icon

FQB12N50TMAM002

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 39 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 8.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf pdf_icon

FQB12N50TMAM002

April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo

 8.2. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf pdf_icon

FQB12N50TMAM002

September 2007 QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially

MOSTRAR MÁS

Otros transistores... FQAF9N50, FQAF9P25, FQB10N20C, FQB10N20LTM, FQB10N60CTM, FQB11N40CTM, FQB11N40TM, FQB11P06TM, BS170, FQB12N60CTM, FQB12N60TMAM002, FQB12P10TM, FQB12P20TM, FQB13N06LTM, FQB13N06TM, FQB13N10LTM, FQB13N10