FQB12N50TMAM002 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB12N50TMAM002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 12.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
Package: D2-PAK
FQB12N50TMAM002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB12N50TMAM002 Datasheet (PDF)
fqb12n50tm am002 fqi12n50tu.pdf
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Datasheet: FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , FQB11P06TM , 75N75 , FQB12N60CTM , FQB12N60TMAM002 , FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , FQB13N10 .
