FQB12N60TMAM002 Todos los transistores

 

FQB12N60TMAM002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB12N60TMAM002
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB12N60TMAM002 Datasheet (PDF)

 4.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf pdf_icon

FQB12N60TMAM002

April 2000TMQFETQFETQFETQFETFQB12N60 / FQI12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

 6.1. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf pdf_icon

FQB12N60TMAM002

September 2007 QFETFQB12N60C / FQI12N60C600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especially

 8.1. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf pdf_icon

FQB12N60TMAM002

TMQFETFQB12N50 / FQI12N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 39 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

MOSTRAR MÁS

Otros transistores... FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM , FQB11P06TM , FQB12N50TMAM002 , FQB12N60CTM , STF13NM60N , FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 .

History: SI7682DP | SSF11NS70UF | ELM321604A | CS7807 | GP2M002A060XG

 

 
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