FQB12N60TMAM002 Specs and Replacement

Type Designator: FQB12N60TMAM002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: D2-PAK

FQB12N60TMAM002 substitution

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FQB12N60TMAM002 datasheet

 4.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf pdf_icon

FQB12N60TMAM002

April 2000 TM QFET QFET QFET QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo... See More ⇒

 6.1. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf pdf_icon

FQB12N60TMAM002

September 2007 QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially ... See More ⇒

 8.1. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf pdf_icon

FQB12N60TMAM002

TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 39 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored... See More ⇒

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Detailed specifications: FQB10N20C, FQB10N20LTM, FQB10N60CTM, FQB11N40CTM, FQB11N40TM, FQB11P06TM, FQB12N50TMAM002, FQB12N60CTM, IRFP250, FQB12P10TM, FQB12P20TM, FQB13N06LTM, FQB13N06TM, FQB13N10LTM, FQB13N10, FQB13N50CTM, FQB14N15

Keywords - FQB12N60TMAM002 MOSFET specs

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