Справочник MOSFET. FQB12N60TMAM002

 

FQB12N60TMAM002 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB12N60TMAM002
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 180 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 10.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 42 nC
   Время нарастания (tr): 115 ns
   Выходная емкость (Cd): 200 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.7 Ohm
   Тип корпуса: D2-PAK

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FQB12N60TMAM002 Datasheet (PDF)

 4.1. Size:540K  fairchild semi
fqb12n60tm am002 fqi12n60tu.pdf

FQB12N60TMAM002
FQB12N60TMAM002

April 2000TMQFETQFETQFETQFETFQB12N60 / FQI12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

 6.1. Size:821K  fairchild semi
fqb12n60ctm fqi12n60ctu.pdf

FQB12N60TMAM002
FQB12N60TMAM002

September 2007 QFETFQB12N60C / FQI12N60C600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especially

 8.1. Size:616K  fairchild semi
fqb12n50tm am002 fqi12n50tu.pdf

FQB12N60TMAM002
FQB12N60TMAM002

TMQFETFQB12N50 / FQI12N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 39 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

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