FQB16N25CTM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB16N25CTM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: D2-PAK

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FQB16N25CTM datasheet

 ..1. Size:761K  fairchild semi
 fqb16n25ctm fqi16n25ctu.pdf pdf_icon

FQB16N25CTM

June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 41nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica

 6.1. Size:740K  fairchild semi
 fqb16n25tm.pdf pdf_icon

FQB16N25CTM

May 2000 TM QFET QFET QFET QFET FQB16N25 / FQI16N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology h

 8.1. Size:737K  fairchild semi
 fqb16n15tm.pdf pdf_icon

FQB16N25CTM

April 2000 TM QFET QFET QFET QFET FQB16N15 / FQI16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo

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