FQB16N25CTM Specs and Replacement
Type Designator: FQB16N25CTM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: D2-PAK
FQB16N25CTM substitution
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FQB16N25CTM datasheet
fqb16n25ctm fqi16n25ctu.pdf
June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 41nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒
fqb16n25tm.pdf
May 2000 TM QFET QFET QFET QFET FQB16N25 / FQI16N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology h... See More ⇒
fqb16n15tm.pdf
April 2000 TM QFET QFET QFET QFET FQB16N15 / FQI16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒
Detailed specifications: FQB13N06TM, FQB13N10LTM, FQB13N10, FQB13N50CTM, FQB14N15, FQB14N30TM, FQB15P12TM, FQB16N15TM, STF13NM60N, FQB16N25TM, FQB17N08LTM, FQB17N08TM, FQB17P06TM, FQB17P10TM, FQB19N10LTM, FQB19N10TM, FQB19N20CTM
Keywords - FQB16N25CTM MOSFET specs
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