FQB16N25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB16N25TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 142 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 16 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 27 nC
Tiempo de subida (tr): 140 nS
Conductancia de drenaje-sustrato (Cd): 190 pF
Resistencia entre drenaje y fuente RDS(on): 0.23 Ohm
Paquete / Cubierta: D2-PAK
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FQB16N25TM Datasheet (PDF)
fqb16n25tm.pdf
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fqb16n15tm.pdf
April 2000TMQFETQFETQFETQFETFQB16N15 / FQI16N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technolo
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