FQB16N25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB16N25TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 142 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Paquete / Cubierta: D2-PAK
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FQB16N25TM Datasheet (PDF)
fqb16n25tm.pdf
May 2000TMQFETQFETQFETQFETFQB16N25 / FQI16N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology h
fqb16n25ctm fqi16n25ctu.pdf
June 2006 QFETFQB16N25C/FQI16N25C250V N-Channel MOSFETFeatures Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 41nC)stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica
fqb16n15tm.pdf
April 2000TMQFETQFETQFETQFETFQB16N15 / FQI16N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technolo
Otros transistores... FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , FQB14N30TM , FQB15P12TM , FQB16N15TM , FQB16N25CTM , IRFZ24N , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM , FQB19N10LTM , FQB19N10TM , FQB19N20CTM , FQB19N20LTM .
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