All MOSFET. FQB16N25TM Datasheet

 

FQB16N25TM Datasheet and Replacement


   Type Designator: FQB16N25TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: D2-PAK
 

 FQB16N25TM substitution

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FQB16N25TM Datasheet (PDF)

 ..1. Size:740K  fairchild semi
 fqb16n25tm.pdf pdf_icon

FQB16N25TM

May 2000TMQFETQFETQFETQFETFQB16N25 / FQI16N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 250V, RDS(on) = 0.23 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology h

 6.1. Size:761K  fairchild semi
 fqb16n25ctm fqi16n25ctu.pdf pdf_icon

FQB16N25TM

June 2006 QFETFQB16N25C/FQI16N25C250V N-Channel MOSFETFeatures Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 41nC)stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica

 8.1. Size:737K  fairchild semi
 fqb16n15tm.pdf pdf_icon

FQB16N25TM

April 2000TMQFETQFETQFETQFETFQB16N15 / FQI16N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16.4A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technolo

Datasheet: FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , FQB14N30TM , FQB15P12TM , FQB16N15TM , FQB16N25CTM , AON6380 , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM , FQB19N10LTM , FQB19N10TM , FQB19N20CTM , FQB19N20LTM .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | IXTA4N150HV

Keywords - FQB16N25TM MOSFET datasheet

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