FQB19N10TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB19N10TM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: D2-PAK

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FQB19N10TM datasheet

 ..1. Size:926K  fairchild semi
 fqb19n10tm.pdf pdf_icon

FQB19N10TM

October 2008 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especially

 6.1. Size:611K  fairchild semi
 fqb19n10ltm.pdf pdf_icon

FQB19N10TM

August 2000 TM QFET QFET QFET QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced tec

 8.1. Size:831K  fairchild semi
 fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf pdf_icon

FQB19N10TM

October 2008 QFET FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espec

 8.2. Size:839K  fairchild semi
 fqb19n20ltm fqb19n20l fqi19n20l.pdf pdf_icon

FQB19N10TM

October 2008 QFET FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

MOSTRAR MÁS

Otros transistores... FQB16N15TM, FQB16N25CTM, FQB16N25TM, FQB17N08LTM, FQB17N08TM, FQB17P06TM, FQB17P10TM, FQB19N10LTM, IRFB31N20D, FQB19N20CTM, FQB19N20LTM, FQB19N20TM, FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM