FQB19N10TM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQB19N10TM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 150 ns
Cossⓘ - Выходная емкость: 165 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB19N10TM
FQB19N10TM Datasheet (PDF)
fqb19n10tm.pdf

October 2008QFETFQB19N10 / FQI19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especially
fqb19n10ltm.pdf

August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf

October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec
fqb19n20ltm fqb19n20l fqi19n20l.pdf

October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been
Другие MOSFET... FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM , FQB19N10LTM , IRF730 , FQB19N20CTM , FQB19N20LTM , FQB19N20TM , FQB1N60TM , FQB1P50TM , FQB20N06LTM , FQB20N06TM , FQB22P10TM .
History: TPA70R950C | BUZ77B | IPAN60R210PFD7S | P6503FMA | 2SK3405 | AON7246 | IXFK24N100
History: TPA70R950C | BUZ77B | IPAN60R210PFD7S | P6503FMA | 2SK3405 | AON7246 | IXFK24N100



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