FQB19N10TM
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB19N10TM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 150
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
D2-PAK
FQB19N10TM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB19N10TM
Datasheet (PDF)
..1. Size:926K fairchild semi
fqb19n10tm.pdf 
October 2008QFETFQB19N10 / FQI19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especially
6.1. Size:611K fairchild semi
fqb19n10ltm.pdf
August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
8.1. Size:831K fairchild semi
fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf
October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec
8.2. Size:839K fairchild semi
fqb19n20ltm fqb19n20l fqi19n20l.pdf
October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been
8.3. Size:1167K fairchild semi
fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf
October 2008QFETFQB19N20C/FQI19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been espec
8.4. Size:1047K onsemi
fqb19n20c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.5. Size:1000K onsemi
fqb19n20.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.6. Size:1034K onsemi
fqb19n20l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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