FQB27N25TMAM002 Todos los transistores

 

FQB27N25TMAM002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB27N25TMAM002
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 270 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: D2-PAK

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FQB27N25TMAM002 Datasheet (PDF)

 4.1. Size:814K  fairchild semi
fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf

FQB27N25TMAM002
FQB27N25TMAM002

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

 4.2. Size:494K  fairchild semi
fqb27n25tm f085.pdf

FQB27N25TMAM002
FQB27N25TMAM002

May 2014FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFETD250 V, 25.5 A, 131 m Features Typ RDS(on) = 108m at VGS = 10V, ID = 25.5A Typ Qg(tot) = 45nC at VGS = 10V, ID = 27AGS UIS CapabilityDTO-263AB RoHS Compliant TO-262AB Qualified to AEC Q101Applications Automotive Engine ControlG Powertrain Management Solenoid and Motor Drivers Electronic Ste

 9.1. Size:1071K  fairchild semi
fqb27p06tm fqi27p06tu.pdf

FQB27N25TMAM002
FQB27N25TMAM002

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 9.2. Size:1119K  fairchild semi
fqb27p06 fqi27p06.pdf

FQB27N25TMAM002
FQB27N25TMAM002

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 9.3. Size:985K  onsemi
fqb27p06.pdf

FQB27N25TMAM002
FQB27N25TMAM002

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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