FQB27N25TMAM002. Аналоги и основные параметры

Наименование производителя: FQB27N25TMAM002

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 180 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 270 ns

Cossⓘ - Выходная емкость: 360 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB27N25TMAM002

- подборⓘ MOSFET транзистора по параметрам

 

FQB27N25TMAM002 даташит

 4.1. Size:814K  fairchild semi
 fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

FQB27N25TMAM002

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology

 4.2. Size:494K  fairchild semi
 fqb27n25tm f085.pdf pdf_icon

FQB27N25TMAM002

May 2014 FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFET D 250 V, 25.5 A, 131 m Features Typ RDS(on) = 108m at VGS = 10V, ID = 25.5A Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A G S UIS Capability D TO-263AB RoHS Compliant TO-262AB Qualified to AEC Q101 Applications Automotive Engine Control G Powertrain Management Solenoid and Motor Drivers Electronic Ste

 9.1. Size:1071K  fairchild semi
 fqb27p06tm fqi27p06tu.pdf pdf_icon

FQB27N25TMAM002

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia

 9.2. Size:1119K  fairchild semi
 fqb27p06 fqi27p06.pdf pdf_icon

FQB27N25TMAM002

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia

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