FQB27N25TMAM002 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQB27N25TMAM002
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 25.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 270 ns
Выходная емкость (Cd): 360 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB27N25TMAM002
FQB27N25TMAM002 Datasheet (PDF)
fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf
May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology
fqb27n25tm f085.pdf
May 2014FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFETD250 V, 25.5 A, 131 m Features Typ RDS(on) = 108m at VGS = 10V, ID = 25.5A Typ Qg(tot) = 45nC at VGS = 10V, ID = 27AGS UIS CapabilityDTO-263AB RoHS Compliant TO-262AB Qualified to AEC Q101Applications Automotive Engine ControlG Powertrain Management Solenoid and Motor Drivers Electronic Ste
fqb27p06tm fqi27p06tu.pdf
October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia
fqb27p06 fqi27p06.pdf
October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia
fqb27p06.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
