FQB27N25TMAM002 Specs and Replacement

Type Designator: FQB27N25TMAM002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 270 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: D2-PAK

FQB27N25TMAM002 substitution

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FQB27N25TMAM002 datasheet

 4.1. Size:814K  fairchild semi
fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

FQB27N25TMAM002

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology... See More ⇒

 4.2. Size:494K  fairchild semi
fqb27n25tm f085.pdf pdf_icon

FQB27N25TMAM002

May 2014 FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFET D 250 V, 25.5 A, 131 m Features Typ RDS(on) = 108m at VGS = 10V, ID = 25.5A Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A G S UIS Capability D TO-263AB RoHS Compliant TO-262AB Qualified to AEC Q101 Applications Automotive Engine Control G Powertrain Management Solenoid and Motor Drivers Electronic Ste... See More ⇒

 9.1. Size:1071K  fairchild semi
fqb27p06tm fqi27p06tu.pdf pdf_icon

FQB27N25TMAM002

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia... See More ⇒

 9.2. Size:1119K  fairchild semi
fqb27p06 fqi27p06.pdf pdf_icon

FQB27N25TMAM002

October 2008 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especia... See More ⇒

Detailed specifications: FQB19N20TM, FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM, FQB24N08TM, FQB25N33TM, K2611, FQB27P06TM, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM, FQB2P25TM

Keywords - FQB27N25TMAM002 MOSFET specs

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