IRFW510A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFW510A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 14 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IRFW510A MOSFET
- Selecciónⓘ de transistores por parámetros
IRFW510A datasheet
9.4. Size:266K fairchild semi
irfw550a irfi550a.pdf 
IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 1 2 3 3 1. Gat
9.5. Size:508K samsung
irfw530a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.092 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Abs
9.6. Size:508K samsung
irfw540a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.041 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Abso
9.7. Size:513K samsung
irfw550a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute
9.8. Size:503K samsung
irfw520a.pdf
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Abso
Otros transistores... IRFU9210
, IRFU9212
, IRFU9214
, IRFU9220
, IRFU9222
, IRFU9310
, IRFUC20
, IRFW450
, AON6414A
, IRFW520A
, IRFW530A
, IRFW540A
, IRFW550A
, IRFW610A
, IRFW614A
, IRFW620A
, IRFW624A
.
History: IRFW450
