IRFW510A Datasheet and Replacement
Type Designator: IRFW510A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 5.6
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Qg ⓘ - Total Gate Charge: 8.5
nC
tr ⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 55
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
IRFW510A Datasheet (PDF)
9.4. Size:266K fairchild semi
irfw550a irfi550a.pdf 
IRFW/I550AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 C Operating Temperature2A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)112331. Gat
9.5. Size:508K samsung
irfw530a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)112331. Gate 2. Drain 3. SourceAbs
9.6. Size:508K samsung
irfw540a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)112331. Gate 2. Drain 3. SourceAbso
9.7. Size:513K samsung
irfw550a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute
9.8. Size:503K samsung
irfw520a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)112331. Gate 2. Drain 3. SourceAbso
Datasheet: IRFU9210
, IRFU9212
, IRFU9214
, IRFU9220
, IRFU9222
, IRFU9310
, IRFUC20
, IRFW450
, IRFB4110
, IRFW520A
, IRFW530A
, IRFW540A
, IRFW550A
, IRFW610A
, IRFW614A
, IRFW620A
, IRFW624A
.
Keywords - IRFW510A MOSFET datasheet
IRFW510A cross reference
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