All MOSFET. IRFW510A Datasheet

 

IRFW510A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFW510A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO263

 IRFW510A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFW510A Datasheet (PDF)

 ..1. Size:282K  1
 irfi510a irfw510a.pdf

IRFW510A IRFW510A

 9.1. Size:285K  1
 irfi540a irfw540a.pdf

IRFW510A IRFW510A

 9.2. Size:272K  1
 irfi530a irfw530a.pdf

IRFW510A IRFW510A

 9.3. Size:215K  1
 irfi520a irfw520a.pdf

IRFW510A IRFW510A

 9.4. Size:266K  fairchild semi
 irfw550a irfi550a.pdf

IRFW510A IRFW510A

IRFW/I550AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 C Operating Temperature2A (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)112331. Gat

 9.5. Size:508K  samsung
 irfw530a.pdf

IRFW510A IRFW510A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)112331. Gate 2. Drain 3. SourceAbs

 9.6. Size:508K  samsung
 irfw540a.pdf

IRFW510A IRFW510A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)112331. Gate 2. Drain 3. SourceAbso

 9.7. Size:513K  samsung
 irfw550a.pdf

IRFW510A IRFW510A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute

 9.8. Size:503K  samsung
 irfw520a.pdf

IRFW510A IRFW510A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)112331. Gate 2. Drain 3. SourceAbso

Datasheet: IRFU9210 , IRFU9212 , IRFU9214 , IRFU9220 , IRFU9222 , IRFU9310 , IRFUC20 , IRFW450 , IRFB4115 , IRFW520A , IRFW530A , IRFW540A , IRFW550A , IRFW610A , IRFW614A , IRFW620A , IRFW624A .

 

 
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