FQB34N20TMAM002 Todos los transistores

 

FQB34N20TMAM002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB34N20TMAM002
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 280 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB34N20TMAM002 Datasheet (PDF)

 4.1. Size:1043K  fairchild semi
fqb34n20tm am002.pdf pdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 6.1. Size:1876K  fairchild semi
fqb34n20 fqi34n20.pdf pdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 6.2. Size:1051K  fairchild semi
fqb34n20l fqi34n20l.pdf pdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

 6.3. Size:1016K  fairchild semi
fqb34n20ltm.pdf pdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

Otros transistores... FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , FQB33N10TM , FQB34N20LTM , 50N06 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM .

History: NCE65N330R | PMN230ENEA | AOB414

 

 
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