Справочник MOSFET. FQB34N20TMAM002

 

FQB34N20TMAM002 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB34N20TMAM002
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 280 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: D2-PAK
 

 Аналог (замена) для FQB34N20TMAM002

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB34N20TMAM002 Datasheet (PDF)

 4.1. Size:1043K  fairchild semi
fqb34n20tm am002.pdfpdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 6.1. Size:1876K  fairchild semi
fqb34n20 fqi34n20.pdfpdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 6.2. Size:1051K  fairchild semi
fqb34n20l fqi34n20l.pdfpdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

 6.3. Size:1016K  fairchild semi
fqb34n20ltm.pdfpdf_icon

FQB34N20TMAM002

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

Другие MOSFET... FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , FQB33N10TM , FQB34N20LTM , 50N06 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM .

History: APT56F50B2 | NX3020NAKW | FQD19N10TM | 2SK1838S | HSS2300A

 

 
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