Справочник MOSFET. FQB34N20TMAM002

 

FQB34N20TMAM002 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB34N20TMAM002
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 280 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: D2-PAK

 Аналог (замена) для FQB34N20TMAM002

 

 

FQB34N20TMAM002 Datasheet (PDF)

 4.1. Size:1043K  fairchild semi
 fqb34n20tm am002.pdf

FQB34N20TMAM002 FQB34N20TMAM002

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 6.1. Size:1876K  fairchild semi
 fqb34n20 fqi34n20.pdf

FQB34N20TMAM002 FQB34N20TMAM002

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 6.2. Size:1051K  fairchild semi
 fqb34n20l fqi34n20l.pdf

FQB34N20TMAM002 FQB34N20TMAM002

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

 6.3. Size:1016K  fairchild semi
 fqb34n20ltm.pdf

FQB34N20TMAM002 FQB34N20TMAM002

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

 6.4. Size:797K  onsemi
 fqb34n20.pdf

FQB34N20TMAM002 FQB34N20TMAM002

FQB34N20N-Channel QFET MOSFET200 V, 31 A, 75 mFeatures 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V,DescriptionID = 15.5 AThis N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC)is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF)MOSFET technology has been especially t

 6.5. Size:952K  onsemi
 fqb34n20l.pdf

FQB34N20TMAM002 FQB34N20TMAM002

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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