FQB34N20TMAM002 Specs and Replacement

Type Designator: FQB34N20TMAM002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: D2-PAK

FQB34N20TMAM002 substitution

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FQB34N20TMAM002 datasheet

 4.1. Size:1043K  fairchild semi
fqb34n20tm am002.pdf pdf_icon

FQB34N20TMAM002

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia... See More ⇒

 6.1. Size:1876K  fairchild semi
fqb34n20 fqi34n20.pdf pdf_icon

FQB34N20TMAM002

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia... See More ⇒

 6.2. Size:1051K  fairchild semi
fqb34n20l fqi34n20l.pdf pdf_icon

FQB34N20TMAM002

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been ... See More ⇒

 6.3. Size:1016K  fairchild semi
fqb34n20ltm.pdf pdf_icon

FQB34N20TMAM002

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been ... See More ⇒

Detailed specifications: FQB2P40TM, FQB30N06LTM, FQB30N06TM, FQB32N12V2TM, FQB32N20CTM, FQB33N10LTM, FQB33N10TM, FQB34N20LTM, 50N06, FQB34P10TM, FQB3N25TM, FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM, FQB3P20TM, FQB3P50TM

Keywords - FQB34N20TMAM002 MOSFET specs

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