FQB55N06TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB55N06TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 133 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 490 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: D2-PAK
- Selección de transistores por parámetros
FQB55N06TM Datasheet (PDF)
fqb55n06tm.pdf

May 2001TMQFETFQB55N06 / FQI55N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t
fqb55n10tm.pdf

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia
fqb55n10 fqi55n10.pdf

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia
Otros transistores... FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM , FQB50N06LTM , FQB50N06TM , AON7408 , FQB55N10TM , FQB5N15TM , FQB5N20LTM , FQB5N20TM , FQB5N30TM , FQB5N40TM , FQB5N50CFTM , FQB5N50CTM .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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