FQB55N06TM Datasheet and Replacement
Type Designator: FQB55N06TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 133 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 490 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: D2-PAK
FQB55N06TM substitution
FQB55N06TM Datasheet (PDF)
fqb55n06tm.pdf

May 2001TMQFETFQB55N06 / FQI55N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t
fqb55n10tm.pdf

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia
fqb55n10 fqi55n10.pdf

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia
Datasheet: FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM , FQB50N06LTM , FQB50N06TM , 7N65 , FQB55N10TM , FQB5N15TM , FQB5N20LTM , FQB5N20TM , FQB5N30TM , FQB5N40TM , FQB5N50CFTM , FQB5N50CTM .
Keywords - FQB55N06TM MOSFET datasheet
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