FQB70N10TMAM002 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB70N10TMAM002  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 470 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: D2-PAK

  📄📄 Copiar 

 Búsqueda de reemplazo de FQB70N10TMAM002 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQB70N10TMAM002 datasheet

 4.1. Size:646K  fairchild semi
 fqb70n10tm am002.pdf pdf_icon

FQB70N10TMAM002

August 2000 TM QFET QFET QFET QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technolo

 8.1. Size:678K  fairchild semi
 fqb70n08 fqi70n08.pdf pdf_icon

FQB70N10TMAM002

August 2000 TM QFET QFET QFET QFET FQB70N08 / FQI70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology

 8.2. Size:258K  inchange semiconductor
 fqb70n08.pdf pdf_icon

FQB70N10TMAM002

Isc N-Channel MOSFET Transistor FQB70N08 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Otros transistores... FQB6N25TM, FQB6N40CTM, FQB6N50, FQB6N60CTM, FQB6N60TM, FQB6N70TM, FQB6N80TM, FQB6N90TMAM002, AO4407A, FQB7N10LTM, FQB7N20LTM, FQB7N30TM, FQB7N60TM, FQB7N65CTM, FQB7N80TMAM002, FQB7P06TM, FQB85N06TMAM002