FQB70N10TMAM002 Specs and Replacement
Type Designator: FQB70N10TMAM002
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 470 nS
Cossⓘ - Output Capacitance: 720 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: D2-PAK
FQB70N10TMAM002 substitution
- MOSFET ⓘ Cross-Reference Search
FQB70N10TMAM002 datasheet
fqb70n10tm am002.pdf
August 2000 TM QFET QFET QFET QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technolo... See More ⇒
fqb70n08 fqi70n08.pdf
August 2000 TM QFET QFET QFET QFET FQB70N08 / FQI70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology... See More ⇒
fqb70n08.pdf
Isc N-Channel MOSFET Transistor FQB70N08 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒
Detailed specifications: FQB6N25TM, FQB6N40CTM, FQB6N50, FQB6N60CTM, FQB6N60TM, FQB6N70TM, FQB6N80TM, FQB6N90TMAM002, AON7506, FQB7N10LTM, FQB7N20LTM, FQB7N30TM, FQB7N60TM, FQB7N65CTM, FQB7N80TMAM002, FQB7P06TM, FQB85N06TMAM002
Keywords - FQB70N10TMAM002 MOSFET specs
FQB70N10TMAM002 cross reference
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FQB70N10TMAM002 substitution
FQB70N10TMAM002 replacement
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History: BL8N60-P | BL8N60-A
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