FQB7P06TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB7P06TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.41 Ohm

Encapsulados: D2-PAK

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FQB7P06TM datasheet

 ..1. Size:660K  fairchild semi
 fqb7p06tm.pdf pdf_icon

FQB7P06TM

May 2001 TM QFET FQB7P06 / FQI7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially t

 9.1. Size:930K  fairchild semi
 fqb7p20tm f085.pdf pdf_icon

FQB7P06TM

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial

 9.2. Size:808K  fairchild semi
 fqb7p20 fqi7p20.pdf pdf_icon

FQB7P06TM

November 2008 QFET FQB7P20 / FQI7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been espec

 9.3. Size:819K  onsemi
 fqb7p20tm f085.pdf pdf_icon

FQB7P06TM

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial

MOSTRAR MÁS

Otros transistores... FQB6N90TMAM002, FQB70N10TMAM002, FQB7N10LTM, FQB7N20LTM, FQB7N30TM, FQB7N60TM, FQB7N65CTM, FQB7N80TMAM002, IRFP250, FQB85N06TMAM002, FQB8N25TM, FQB8N60CFTM, FQB8P10TM, FQB9N08LTM, FQB9N08TM, FQB9N15TM, FQB9N25CTM