All MOSFET. FQB7P06TM Datasheet

 

FQB7P06TM Datasheet and Replacement


   Type Designator: FQB7P06TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm
   Package: D2-PAK
 

 FQB7P06TM substitution

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FQB7P06TM Datasheet (PDF)

 ..1. Size:660K  fairchild semi
 fqb7p06tm.pdf pdf_icon

FQB7P06TM

May 2001TMQFETFQB7P06 / FQI7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially t

 9.1. Size:930K  fairchild semi
 fqb7p20tm f085.pdf pdf_icon

FQB7P06TM

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

 9.2. Size:808K  fairchild semi
 fqb7p20 fqi7p20.pdf pdf_icon

FQB7P06TM

November 2008QFETFQB7P20 / FQI7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been espec

 9.3. Size:819K  onsemi
 fqb7p20tm f085.pdf pdf_icon

FQB7P06TM

November 2009QFETFQB7P20TM_F085200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especial

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Datasheet: FQB6N90TMAM002 , FQB70N10TMAM002 , FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , IRFP250 , FQB85N06TMAM002 , FQB8N25TM , FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM .

History: IRFR120ZPBF | APT1003R5CN | FQB7N60TM | FQB7N80TMAM002 | APT1004R2BN

Keywords - FQB7P06TM MOSFET datasheet

 FQB7P06TM cross reference
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 FQB7P06TM replacement

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