FQB7P06TM. Аналоги и основные параметры

Наименование производителя: FQB7P06TM

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.41 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB7P06TM

- подборⓘ MOSFET транзистора по параметрам

 

FQB7P06TM даташит

 ..1. Size:660K  fairchild semi
 fqb7p06tm.pdf pdf_icon

FQB7P06TM

May 2001 TM QFET FQB7P06 / FQI7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially t

 9.1. Size:930K  fairchild semi
 fqb7p20tm f085.pdf pdf_icon

FQB7P06TM

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial

 9.2. Size:808K  fairchild semi
 fqb7p20 fqi7p20.pdf pdf_icon

FQB7P06TM

November 2008 QFET FQB7P20 / FQI7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been espec

 9.3. Size:819K  onsemi
 fqb7p20tm f085.pdf pdf_icon

FQB7P06TM

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial

ПОКАЗАТЬ ЕЩЁ

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