FQD10N20LTF Todos los transistores

 

FQD10N20LTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD10N20LTF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: D-PAK
     - Selección de transistores por parámetros

 

FQD10N20LTF Datasheet (PDF)

 ..1. Size:574K  fairchild semi
 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf pdf_icon

FQD10N20LTF

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

 5.1. Size:576K  fairchild semi
 fqd10n20l fqu10n20l.pdf pdf_icon

FQD10N20LTF

December 2000TMQFETQFETQFETQFETFQD10N20L / FQU10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

 5.2. Size:902K  onsemi
 fqd10n20l.pdf pdf_icon

FQD10N20LTF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:906K  cn vbsemi
 fqd10n20l.pdf pdf_icon

FQD10N20LTF

FQD10N20Lwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

MOSTRAR MÁS

Otros transistores... FQB9N25CTM , FQB9N25TM , FQB9N50CFTM , FQB9N50CTM , FQB9N50TM , FQB9P25TM , FQD10N20CTF , FQD10N20CTM , 75N75 , FQD10N20LTM , FQD10N20TF , FQD10N20TM , FQD11P06TF , FQD11P06TM , FQD12N20LTF , FQD12N20LTM , FQD12N20TF .

History: IRFR9014PBF | SVF7N60CF | IRF7309IPBF | CS7N65A3R | WFY3N02 | APT904R2AN | EY4409

 

 
Back to Top

 


 
.