FQD10N20LTF Datasheet. Specs and Replacement

Type Designator: FQD10N20LTF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: D-PAK

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FQD10N20LTF substitution

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FQD10N20LTF datasheet

 ..1. Size:574K  fairchild semi
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FQD10N20LTF

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced... See More ⇒

 5.1. Size:576K  fairchild semi
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FQD10N20LTF

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced... See More ⇒

 5.2. Size:902K  onsemi
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FQD10N20LTF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.3. Size:906K  cn vbsemi
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FQD10N20LTF

FQD10N20L www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN... See More ⇒

Detailed specifications: FQB9N25CTM, FQB9N25TM, FQB9N50CFTM, FQB9N50CTM, FQB9N50TM, FQB9P25TM, FQD10N20CTF, FQD10N20CTM, MMIS60R580P, FQD10N20LTM, FQD10N20TF, FQD10N20TM, FQD11P06TF, FQD11P06TM, FQD12N20LTF, FQD12N20LTM, FQD12N20TF

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