Справочник MOSFET. FQD10N20LTF

 

FQD10N20LTF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD10N20LTF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 51 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 7.6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 13 nC

Время нарастания (tr): 150 ns

Выходная емкость (Cd): 95 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.36 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FQD10N20LTF

 

 

FQD10N20LTF Datasheet (PDF)

1.1. fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf Size:574K _fairchild_semi

FQD10N20LTF
FQD10N20LTF

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced

1.2. fqd10n20l fqu10n20l.pdf Size:576K _fairchild_semi

FQD10N20LTF
FQD10N20LTF

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced

 2.1. fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf Size:853K _fairchild_semi

FQD10N20LTF
FQD10N20LTF

July 2013 FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, produced using Fairchild Semiconductor®’s proprietary ID = 3.9 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 20 nC) MOSFET technology has been espe

2.2. fqd10n20c fqu10n20c.pdf Size:723K _fairchild_semi

FQD10N20LTF
FQD10N20LTF

January 2009 QFET® FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been espe

 2.3. fqd10n20tf fqd10n20tm fqu10n20tu.pdf Size:778K _fairchild_semi

FQD10N20LTF
FQD10N20LTF

April 2000 TM QFET QFET QFET QFET FQD10N20 / FQU10N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technol

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