FQD10N20LTF - описание и поиск аналогов

 

FQD10N20LTF - Аналоги. Основные параметры


   Наименование производителя: FQD10N20LTF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: D-PAK
 

 Аналог (замена) для FQD10N20LTF

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD10N20LTF технические параметры

 ..1. Size:574K  fairchild semi
 fqd10n20ltf fqd10n20ltm fqu10n20ltu.pdf pdf_icon

FQD10N20LTF

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced

 5.1. Size:576K  fairchild semi
 fqd10n20l fqu10n20l.pdf pdf_icon

FQD10N20LTF

December 2000 TM QFET QFET QFET QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced

 5.2. Size:902K  onsemi
 fqd10n20l.pdf pdf_icon

FQD10N20LTF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:906K  cn vbsemi
 fqd10n20l.pdf pdf_icon

FQD10N20LTF

FQD10N20L www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQB9N25CTM , FQB9N25TM , FQB9N50CFTM , FQB9N50CTM , FQB9N50TM , FQB9P25TM , FQD10N20CTF , FQD10N20CTM , P60NF06 , FQD10N20LTM , FQD10N20TF , FQD10N20TM , FQD11P06TF , FQD11P06TM , FQD12N20LTF , FQD12N20LTM , FQD12N20TF .

 

 
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