IRFW630A Todos los transistores

 ..1. Size:215K  1
 irfi630a irfw630a.pdf

 ..2. Size:509K  samsung
 irfw630a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 0.333 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 7.1. Size:712K  fairchild semi
 irfw630b irfi630b.pdf

IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc

 7.2. Size:697K  fairchild semi
 irfw630b.pdf

November 2013 IRFW630B N-Channel MOSFET 200 V, 9 A, 400 m Features Description These N-Channel enhancement mode power field effect 9.0 A, 200 V, RDS(on) = 400 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 4.5 A planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state Low Gate Charge (Typ.

 8.1. Size:214K  1
 irfi634a irfw634a.pdf